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Kenji Yasuda, Xirui Wang, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo‐Herrero
2D ferroelectrics with robust polarization down to atomic thicknesses provide building blocks for functional heterostructures. Experimental realization remains challenging because of the requirement of a layered polar crystal. Here, we demonstrate a rational design approach to engineering 2D ferroelectrics from a non-ferroelectric parent compound via employing van der Waals assembly. Parallel-stacked bilayer boron nitride exhibits out-of-plane electric polarization that reverses depending on the stacking order. The polarization switching is probed via the resistance of an adjacently stacked graphene sheet. Twisting the boron nitride sheets by a small angle changes the dynamics of switching thanks to the formation of moiré ferroelectricity with staggered polarization. The ferroelectricity persists to room temperature while keeping the high mobility of graphene, paving the way for potential ultrathin nonvolatile memory applications.
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Yasuda, K., Wang, X., Watanabe, K., Taniguchi, T., & Jarillo‐Herrero, P. (2021). Stacking-engineered ferroelectricity in bilayer boron nitride. Science, 372(6549), 1458–1462. https://doi.org/10.1126/science.abd3230
Yasuda, Kenji, et al. "Stacking-engineered ferroelectricity in bilayer boron nitride." Science, vol. 372, no. 6549, 2021, pp. 1458–1462, https://doi.org/10.1126/science.abd3230.
Yasuda, Kenji, Xirui Wang, Kenji Watanabe, Takashi Taniguchi, and Pablo Jarillo‐Herrero. "Stacking-engineered ferroelectricity in bilayer boron nitride." Science 372, no. 6549 (2021): 1458–1462. https://doi.org/10.1126/science.abd3230.
Yasuda K., Wang X., Watanabe K. [и др.] Stacking-engineered ferroelectricity in bilayer boron nitride // Science. — 2021. — Vol. 372, № 6549. — P. 1458–1462. — URL: https://doi.org/10.1126/science.abd3230
@article{yasuda2021stackingengineered,
title = {{Stacking-engineered ferroelectricity in bilayer boron nitride}},
author = {Kenji Yasuda and Xirui Wang and Kenji Watanabe and Takashi Taniguchi and Pablo Jarillo‐Herrero},
journal = {Science},
year = {2021},
volume = {372},
number = {6549},
pages = {1458--1462},
doi = {10.1126/science.abd3230},
url = {https://doi.org/10.1126/science.abd3230}
}TY - JOUR AU - Yasuda, Kenji AU - Wang, Xirui AU - Watanabe, Kenji AU - Taniguchi, Takashi AU - Jarillo‐Herrero, Pablo TI - Stacking-engineered ferroelectricity in bilayer boron nitride JO - Science VL - 372 IS - 6549 SP - 1458 EP - 1462 PY - 2021 DA - 2021/05/27 DO - 10.1126/science.abd3230 UR - https://doi.org/10.1126/science.abd3230 ER -
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